M312L5628BT0-CB0Q0 - Samsung 2GB RDIMM 184-Pin Memory Module
SKU M312L5628BT0-CB0Q0
Samsung M312L5628BT0-CB0Q0 2GB DDR-266/PC-2100 RDIMM 184-Pin CL2.5 Dual Rank x4 ECC Registered Memory Module
Experience reliable and high-speed performance with Samsung M312L5628BT0-CB0Q0 server memory. This module offers 2GB well-suited for high-throughput computing. It is designed according to DDR-266/PC-2100 specifications, ensuring reliable operation across a broad range of server environments. The RDIMM type supports error detection and correction, making it perfect for applications that demand high reliability. With a quick 266MHz, it keeps your data-hungry tasks running smoothly.
- Increased bandwidth for high-speed operations
- Long-lasting components for extended usage
- Less downtime through stable operations
- Thermal regulation for high-load systems
- Easy to install with plug-and-play design
General Information
| Model | M312L5628BT0-CB0Q0 |
|---|---|
| Product Type | Memory Module |
Technical Information
| Memory Capacity | 2 GB |
|---|---|
| Memory Technology | DDR |
| Product Voltage | 2.5V |
| RAM Speed | 266MHz |
| RAM Standard | DDR-266/PC-2100 |
| Error Identifying | ECC |
| Signal Type | Registered |
| Column Access Strobe (CAS) | CL2.5 |
| Rank | Dual Rank x4 |
| Quantity of Pins | 184-pin |
| RAM Genre | RDIMM |
Miscellaneous
| Compliance Standards | EU RoHS, FCC |
|---|
Also known as — equivalent part numbers
This part is sold under the following identifiers. Search any of them to reach this page.
- Primary part number
- M312L5628BT0-CB0Q0
Warranty
Warranty included, backed directly by SAHS. See our Warranty Policy for details.
Returns
Contact our team with your order details and we'll walk you through the process — see our Shipping & Returns page and policies for full details.
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